Bipolar (BJT) Transistor NPN V 12A 4MHz 2W Through Hole TOAB. 1 May The MJE is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited. MJE HIGH VOLTAGE FAST-SWITCHING. NPN POWER TRANSISTOR s. STMicroelectronics PREFERRED. SALESTYPE s. HIGH VOLTAGE CAPABILITY.

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